Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics

Document Type

Article

Publication Date

6-1-2006

Abstract

The defects related to the gate-dielectric in high-κ-MOSFETs are studied using the 1/f noise technique. Three different types of gate electrodes were used for this purpose - poly-Si, metal (TiN/TaN) and fully Ni Silicided (FUSI) electrodes with Hf-based oxides as the gate dielectric layer. All the three types of devices show a specific behavior near the gate electrode-dielectric interface when the trap profiles are assessed using f × SI spectra. The tunneling depths were calculated and it was found that the high-κ oxide (bulk) layers are being probed. From the drain current spectra SI vs. drain current ID of the various gate material devices at given depths, it may be inferred that the concentration of oxygen-vacancy-related defects can significantly influence the 1/f noise performance, which can explain the differences observed in noise between the gate electrodes. Comparison of FUSI gated devices, with various percentages of Hf in the dielectric layer, shows comparable noise levels (SVG), indicating a minor dependence on Hf-content in the gate dielectric layer. © 2006 Elsevier Ltd. All rights reserved.

Identifier

33745750795 (Scopus)

Publication Title

Solid State Electronics

External Full Text Location

https://doi.org/10.1016/j.sse.2006.05.007

ISSN

00381101

First Page

992

Last Page

998

Issue

6

Volume

50

Grant

-0140584

Fund Ref

National Science Foundation

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