Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications
Document Type
Article
Publication Date
3-1-2023
Abstract
We have investigated the performance characteristics of a III-nitride high electron mobility transistor (HEMT) on different substrates. It exhibits a negative threshold voltage (depletion mode) for a HEMT grown on silicon (Si), silicon carbide (SiC), and sapphire substrates, whereas it shows a positive threshold voltage (enhancement mode) when grown on beta-gallium oxide (β-Ga2O3). Compared to Si, SiC, and sapphire, β-Ga2O3 improves different parameters, such as off-state leakage characteristics, subthreshold voltage, breakdown voltage (VBR), and radio frequency (RF) performance. In addition, it shows breakdown voltage characteristics of 4 V, 11 V, 94 V, and 108 V for a HEMT grown on Si, sapphire, SiC, and β-Ga2O3 , respectively. It also exhibits cut-off frequencies of 122 GHz, 342 GHz, 380 GHz, and 420 GHz for HEMT using Si, sapphire, SiC, and β-Ga2O3 substrates, respectively. Generally, HEMTs suffer from a trade-off between breakdown voltage and frequency characteristics. However, the proposed III-nitride HEMT developed on β-Ga2O3 demonstrated an improved breakdown voltage without affecting its high-frequency characteristics. This achievement is mainly because of a better lattice match between the buffer material and the substrate. This research aims to provide a comprehensive understanding of a III-nitride nano-HEMT developed on a β-Ga2O3 substrate in order to aid future research in this cutting-edge technology.
Identifier
85144705856 (Scopus)
Publication Title
Journal of Electronic Materials
External Full Text Location
https://doi.org/10.1007/s11664-022-10145-4
e-ISSN
1543186X
ISSN
03615235
First Page
1948
Last Page
1957
Issue
3
Volume
52
Grant
MTR/2021/000370
Fund Ref
Department of Science and Technology, Ministry of Science and Technology, India
Recommended Citation
Purnachandra Rao, G.; Lenka, Trupti Ranjan; Singh, Rajan; Boukortt, Nour El I.; Sadaf, Sharif Md; and Nguyen, Hieu Pham Trung, "Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications" (2023). Faculty Publications. 1894.
https://digitalcommons.njit.edu/fac_pubs/1894
