Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

Document Type

Article

Publication Date

8-1-2006

Abstract

The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-κ layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations. © 2006 IEEE.

Identifier

33746478656 (Scopus)

Publication Title

IEEE Electron Device Letters

External Full Text Location

https://doi.org/10.1109/LED.2006.879028

ISSN

07413106

First Page

688

Last Page

691

Issue

8

Volume

27

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