Electron-hole superlattices in GaAs/Alx Ga1- x As multiple quantum wells

Document Type

Article

Publication Date

8-11-2006

Abstract

A GaAs/Al x Ga 1- x As semiconductor structure is proposed, which is predicted to superconduct at T c ≈2K. Formation of an alternating sequence of electron- and hole-populated quantum wells (an electron-hole superlattice) in a modulation-doped GaAs/Al x Ga 1- x As superlattice is considered. This superlattice may be analogous to the layered electronic structure of high- T c superconductors. In the structures of interest, the mean spacing between nearest electron (or hole) wells is the same as the mean distance between the electrons (or holes) in any given well. This geometrical relationship mimics a prominent property of optimally doped high- T c superconductors. Band bending by built-in electric fields from ionized donors and acceptors induces electron and heavy-hole bound states in alternate GaAs quantum wells. A proposed superlattice structure meeting this criterion for superconductivity is studied by self-consistent numerical simulation.

Identifier

33744986929 (Scopus)

Publication Title

Philosophical Magazine

External Full Text Location

https://doi.org/10.1080/14786430600677694

e-ISSN

14786443

ISSN

14786435

First Page

3581

Last Page

3593

Issue

23

Volume

86

Grant

PL-206

Fund Ref

Air Force Office of Scientific Research

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