Implantation and activation of high concentrations of boron and phosphorus in Germanium

Authors

Yong Seok Suh, New Jersey Institute of Technology
M. S. Carroll, Sandia National Laboratories, New Mexico
R. A. Levy, New Jersey Institute of Technology
G. Bisognin, Università degli Studi di Padova
D. De Salvador, Università degli Studi di Padova
M. A. Sahiner, Seton Hall University

Document Type

Conference Proceeding

Publication Date

8-23-2006

Abstract

The effect of increasing boron or phosphorus implant dose (i.e., 5×10¹³-5×10¹⁶ cm^-2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×10²¹ cm^-3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., ≥ 2×10 ²⁰ cm^-3), even immediately after implant; while in contrast, phosphorus is limited to ∼1-2×10¹⁹ cm ^-3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile. © 2006 Materials Research Society.

Identifier

33747348412 (Scopus)

ISBN

[1558998454, 9781558998452]

Publication Title

Materials Research Society Symposium Proceedings

ISSN

02729172

First Page

303

Last Page

308

Volume

891

Recommended Citation

Suh, Yong Seok; Carroll, M. S.; Levy, R. A.; Bisognin, G.; De Salvador, D.; and Sahiner, M. A., "Implantation and activation of high concentrations of boron and phosphorus in Germanium" (2006). Faculty Publications. 18841.
https://digitalcommons.njit.edu/fac_pubs/18841