Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Authors

Yu V. Ryabchikov, Lomonosov Moscow State University
P. A. Forsh, Lomonosov Moscow State University
E. A. Lebedev, Ioffe Institute
V. Yu Timoshenko, Lomonosov Moscow State University
P. K. Kashkarov, Lomonosov Moscow State University
B. V. Kamenev, Newark College of Engineering
L. Tsybeskov, Newark College of Engineering

Document Type

Article

Publication Date

9-1-2006

Abstract

Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures. © Pleiades Publishing, Inc., 2006.

Identifier

33748874358 (Scopus)

Publication Title

Semiconductors

External Full Text Location

https://doi.org/10.1134/S1063782606090119

ISSN

10637826

First Page

1052

Last Page

1054

Issue

9

Volume

40

Recommended Citation

Ryabchikov, Yu V.; Forsh, P. A.; Lebedev, E. A.; Timoshenko, V. Yu; Kashkarov, P. K.; Kamenev, B. V.; and Tsybeskov, L., "Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix" (2006). Faculty Publications. 18833.
https://digitalcommons.njit.edu/fac_pubs/18833