Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen

Document Type

Article

Publication Date

10-1-2006

Abstract

Thin films of GaN with the V/III≈10 ratio were grown by low-pressure metal organic vapour phase epitaxy (LP-MOVPE) using N2 and Dimethylhydrazine (DMHy) as a carrier gas and nitrogen precursor, respectively. For the growth temperatures in the range from 550 to 690 {ring operator}C the GaN layers exhibited good surface morphology. In the temperature range from approximately 550 to 610 {ring operator}C, the growth rate increases with increasing temperature, characteristic of the process limited by surface kinetics with the activation energy of approximately 36 kcal/mol. For the temperatures between 620 and 690 {ring operator}C, the growth rate was nearly independent of temperature, which is indicative of a mass transport limited growth. The activation energy was about 4.6 kcal/mol. Micro Raman spectroscopy revealed a significant relaxation of the selection rules for the scattering by the optical phonons in the films grown at lower temperatures. Variation of the intensity ratio for E2H and E1 phonon modes has been attributed to the changes in the structural quality of the films grown at different temperatures. © 2006 Elsevier Ltd. All rights reserved.

Identifier

33845190575 (Scopus)

Publication Title

Superlattices and Microstructures

External Full Text Location

https://doi.org/10.1016/j.spmi.2006.09.026

e-ISSN

10963677

ISSN

07496036

First Page

476

Last Page

482

Issue

4-6 SPEC. ISS.

Volume

40

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