Microbeam high angular resolution x-ray diffraction in InGaNGaN selective-area-grown ridge structures

Document Type

Article

Publication Date

11-13-2006

Abstract

GaN-based 6-μm -wide ridge waveguides with InGaNGaN multiple-quantum- wells (MQWs) produced by metal organic vapor-phase epitaxy in the regime of selective-area growth have been studied with microbeam high angular resolution x-ray diffraction and reciprocal-space mapping. Variation of the strain from 0.9% to 1.05% and a factor of 3 for the thickness enhancement of the MQW period have been measured for different widths of the oxide mask surrounding the GaN-based ridges. Only when the trapezoidal shape of the ridge cross section is taken into account can the difference between the experimentally measured thickness enhancement and predictions of the long-range gas-phase diffusion model be reconciled. © 2006 American Institute of Physics.

Identifier

33750708579 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.2378558

ISSN

00036951

Issue

18

Volume

89

Fund Ref

National Science Foundation

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