A non contact characterization technique of the defect states of high k dielectrics using THz radiation
Document Type
Conference Proceeding
Publication Date
12-1-2006
Abstract
The effect of high-k dielectric Hafnium dioxide films on 200mm diameter p-type silicon substrates is investigated and compared with conventional dielectric material, Silicon dioxide, using terahertz (THz) time-resolved spectroscopy and visible pump/THz probe spectroscopy. The interfacial defect density at the Hf/p+ interface was estimated to be 60-100 times larger than that of Si/p+ interface.
Identifier
50649105509 (Scopus)
ISBN
[1424400023, 9781424400027]
Publication Title
2006 IEEE Sarnoff Symposium
External Full Text Location
https://doi.org/10.1109/SARNOF.2006.4534806
Recommended Citation
Sengupta, Amartya; Bandyopadhyay, Aparajita; Federici, John F.; Grebel, Haim; and Pham, Daniel, "A non contact characterization technique of the defect states of high k dielectrics using THz radiation" (2006). Faculty Publications. 18655.
https://digitalcommons.njit.edu/fac_pubs/18655
