Fast light-emitting silicon-germanium nanostructures
Document Type
Conference Proceeding
Publication Date
1-1-2012
Abstract
Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. Models for the physics of carrier recombination in these Si/SiGe nanostructures are presented, and a new route toward CMOS compatible light emitters is proposed. ©The Electrochemical Society.
Identifier
84869061833 (Scopus)
ISBN
[9781566779579, 9781607683155]
Publication Title
Ecs Transactions
External Full Text Location
https://doi.org/10.1149/1.3700407
e-ISSN
19386737
ISSN
19385862
First Page
31
Last Page
42
Issue
5
Volume
45
Recommended Citation
Lockwood, D. J.; Wu, X.; Baribeau, J. M.; Modi, N.; and Tsybeskov, L., "Fast light-emitting silicon-germanium nanostructures" (2012). Faculty Publications. 18482.
https://digitalcommons.njit.edu/fac_pubs/18482
