Doping and co-doping of bandgap-engineered ZnO films for solar driven hydrogen production

Document Type

Conference Proceeding

Publication Date

1-1-2012

Abstract

Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.

Identifier

84860851039 (Scopus)

ISBN

[9781118296073]

Publication Title

TMS Annual Meeting

External Full Text Location

https://doi.org/10.1002/9781118356074.ch82

First Page

641

Last Page

649

Volume

1

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