Optical and electronic properties of AlN, GaN and InN: An analysis

Document Type

Conference Proceeding

Publication Date

1-1-2012

Abstract

Optical properties of III-V nitrides, AlN, GaN and InN, have been analyzed in the study. The analysis takes into account the available data of the optical properties in the literature. The related optical properties such as the energy dependent dielectric function, and temperature and pressure dependent band gap are analyzed. Penn-like models are deployed to interpret the peaks in the reflectivity spectra and are compared with available data in the literature. Structure-dependent dielectric functions are investigated from both experimental and theoretical perspectives.

Identifier

84860844794 (Scopus)

ISBN

[9781118296073]

Publication Title

TMS Annual Meeting

External Full Text Location

https://doi.org/10.1002/9781118356074.ch89

First Page

701

Last Page

713

Volume

1

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