Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures

Document Type

Article

Publication Date

3-15-2012

Abstract

We find fatigue of low temperature photoluminescence (PL) in Si/SiGe three-dimensional island morphology nanostructures under continuous excitation. Initially, the PL intensity slowly decreases by less than 15, and after ∼10 min it decreases rapidly by more than 80. After the PL intensity stabilizes, a complete recovery requires heating the sample to nearly room temperature. We propose that accumulation of charge within SiGe islands is responsible for the enhancement of Auger recombination and hence the observed PL fatigue. © 2012 American Institute of Physics.

Identifier

84859524829 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.3698303

ISSN

00218979

Issue

6

Volume

111

Grant

1005682

Fund Ref

National Science Foundation

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