Influence of gas flow rate for formation of aligned nanorods in ZnO thin films for solar-driven hydrogen production

Document Type

Article

Publication Date

4-1-2012

Abstract

ZnO thin films have been deposited in mixed Ar/N 2 gas ambient at substrate temperature of 500°C by radiofrequency sputtering of ZnO targets. We find that an optimum N 2-to-Ar ratio in the deposition ambient promotes the formation of well-aligned nanorods. ZnO thin films grown in ambient with 25% N 2 gas flow rate promoted nanorods aligned along c-axis and exhibit significantly enhanced photoelectrochemical (PEC) response, compared with ZnO thin films grown in an ambient with different N 2-to-Ar gas flow ratios. Our results suggest that chamber ambient is critical for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of PEC water splitting for H2 production. © 2012 TMS.

Identifier

84862811247 (Scopus)

Publication Title

JOM

External Full Text Location

https://doi.org/10.1007/s11837-012-0299-z

e-ISSN

15431851

ISSN

10474838

First Page

526

Last Page

530

Issue

4

Volume

64

Grant

DE-AC36-08GO28308

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