Dual roles of doping and trapping of semiconductor defect levels and their ramification to thin film photovoltaics

Document Type

Conference Proceeding

Publication Date

5-15-2012

Abstract

It is pointed out that the semiconductor localized intrinsic/impurity defect levels' dual roles for carrier doping and trapping (Shockley-Read-Hall generation-recombination) have been treated differently and inconsistently. It is proposed that instead of ionization or activation energy, transition Gibbs free energy level should be used for the dual roles of doping-trapping. To qualitatively evaluate the effectiveness of doping and of trapping, the concept of doping efficacy η d and two types of trapping efficacy η t and η SRH are proposed. The relationship of η d, η t, and η SRH is formulated. Various values of η SRH for different types of defect levels are presented. General ramification of the proposed concepts and efficacy of trapping is explored for polycrystalline thin film solar cells. © 2012 American Institute of Physics.

Identifier

84862128081 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.4719046

ISSN

00218979

Issue

10

Volume

111

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