Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers

Document Type

Conference Proceeding

Publication Date

6-1-2012

Abstract

In nanometer-size Si/SiGe-island heteroepitxial multilayers grown on Si(001), low temperature photoluminescence spectra are observed that strongly depend on the excitation wavelength and show a strong correlation with structural properties revealed by transmission electron microscopy. These experimental results can be explained by assuming that the optically created carriers are strongly localized at Si/SiGe island heterointerfaces. We show that electron-hole pairs are generated and recombine within spatial regions mainly defined by the photoexcitation penetration depth, and that the estimated exciton diffusion length is notably short and comparable with the SiGe-island average size. © 2012 American Institute of Physics.

Identifier

84863307200 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.4729077

ISSN

00218979

Issue

11

Volume

111

Fund Ref

National Science Foundation

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