Interfacial layer growth condition dependent carrier transport mechanisms in HfO 2/SiO 2 gate stacks

Document Type

Article

Publication Date

6-4-2012

Abstract

The temperature and field dependent leakage current in HfO 2/SiO 2 gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level (φ t) and activation energy (E a) increase for chemically grown IL devices. The trap level energy, (φ t) ∼ 0.2 eV, indicates that doubly charged oxygen vacancies (V 2-) are the active electron traps which contribute to the leakage current in these gate stacks. © 2012 American Institute of Physics.

Identifier

84862154855 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.4726186

ISSN

00036951

Issue

23

Volume

100

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