Pressure dependence of energy gap of III-V and II-VI ternary semiconductors

Authors

Dongguo Chen, New Jersey Institute of Technology
N. M. Ravindra, New Jersey Institute of Technology

Document Type

Article

Publication Date

8-1-2012

Abstract

A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively. © Springer Science+Business Media, LLC 2012.

Identifier

84861865009 (Scopus)

Publication Title

Journal of Materials Science

External Full Text Location

https://doi.org/10.1007/s10853-012-6464-5

e-ISSN

15734803

ISSN

00222461

First Page

5735

Last Page

5742

Issue

15

Volume

47

Recommended Citation

Chen, Dongguo and Ravindra, N. M., "Pressure dependence of energy gap of III-V and II-VI ternary semiconductors" (2012). Faculty Publications. 18139.
https://digitalcommons.njit.edu/fac_pubs/18139