The steady state occupancy and Effective Fermi Level of P-N junction

Document Type

Conference Proceeding

Publication Date

11-26-2012

Abstract

Explicit difference between occupation probability of the transition Gibbs free energy level (TGFEL) of semiconductor under equilibrium and that under steady state is pointed out. Our own computer simulation results are presented to show the detailed steady state occupancy of TGFELs under forward and reverse bias cases The result shows that Quasi Fermi levels and capture cross section of defects which is due to columbic interaction or other effects determine the different occupation probability in the region where Quasi Fermi levels are present. An Effective Fermi Level EFeff is defined for these two cases of the semiconductor P-N junction, with the presence of two Quasi Fermi levels. © 2012 IEEE.

Identifier

84869461551 (Scopus)

ISBN

[9781467300643]

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

External Full Text Location

https://doi.org/10.1109/PVSC.2012.6317560

ISSN

01608371

First Page

25

Last Page

28

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