Dc And Rf Performance Of Gaas Mesfet Fabricated On Silicon Substrate Using Epitaxial Lift-Off Technique

Authors

D. M. Shah, Newark College of Engineering
W. K. Chan, Telcordia Technologies, Inc.
T. J. Gmitter, Telcordia Technologies, Inc.
L. T. Florez, Telcordia Technologies, Inc.
H. Schumacher, Telcordia Technologies, Inc.
B. P. Van Der Gaag, Telcordia Technologies, Inc.

Document Type

Article

Publication Date

1-1-1990

Abstract

GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit IDSS= 130mA/mm, g^m=135mS/mm and for 1.3μm gate length unity current gain cut-off frequency fTof 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.

Identifier

0025508008 (Scopus)

Publication Title

Electronics Letters

External Full Text Location

https://doi.org/10.1049/el:19901199

ISSN

00135194

First Page

1865

Last Page

1866

Issue

22

Volume

26

Recommended Citation

Shah, D. M.; Chan, W. K.; Gmitter, T. J.; Florez, L. T.; Schumacher, H.; and Van Der Gaag, B. P., "Dc And Rf Performance Of Gaas Mesfet Fabricated On Silicon Substrate Using Epitaxial Lift-Off Technique" (1990). Faculty Publications. 17840.
https://digitalcommons.njit.edu/fac_pubs/17840