Field emitter tips for vacuum microelectronic devices

Document Type

Article

Publication Date

1-1-1990

Abstract

The design criteria for two forms of field emitters (cone and wedge) for vacuum microelectronic applications are discussed. Effects of practical variations in geometry on emission current, spatial and temporal dispersion of electron emission, and emitter heating are calculated by simulation. Several design guidelines for the geometry of the emitter-anode complex are suggested. A sharp silicon tip processing method is presented, which is based on the oxidation inhibition of silicon at regions of high curvature. Methods for forming emitters of other materials are also discussed. © 1990, American Vacuum Society. All rights reserved.

Identifier

0005530772 (Scopus)

Publication Title

Journal of Vacuum Science and Technology A Vacuum Surfaces and Films

External Full Text Location

https://doi.org/10.1116/1.576511

e-ISSN

15208559

ISSN

07342101

First Page

3586

Last Page

3590

Issue

4

Volume

8

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