Formation of silicon tips with <1 nm radius

Authors

R. B. Marcus, Telcordia Technologies, Inc.
T. S. Ravi, Telcordia Technologies, Inc.
T. Gmitter, Telcordia Technologies, Inc.
K. Chin, New Jersey Institute of Technology
D. Liu, Newark College of Engineering
W. J. Orvis, Lawrence Livermore National Laboratory
D. R. Ciarlo, Lawrence Livermore National Laboratory
C. E. Hunt, University of California, Davis
J. Trujillo, University of California, Davis

Document Type

Article

Publication Date

12-1-1990

Abstract

Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-μm-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

Identifier

36549100947 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.102841

ISSN

00036951

First Page

236

Last Page

238

Issue

3

Volume

56

Recommended Citation

Marcus, R. B.; Ravi, T. S.; Gmitter, T.; Chin, K.; Liu, D.; Orvis, W. J.; Ciarlo, D. R.; Hunt, C. E.; and Trujillo, J., "Formation of silicon tips with <1 nm>radius" (1990). Faculty Publications. 17709.
https://digitalcommons.njit.edu/fac_pubs/17709