Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing

Authors

A. Katz, Nokia Bell Labs
S. N.G. Chu, Nokia Bell Labs
B. E. Weir, Nokia Bell Labs
W. C. Dautremont-Smith, Nokia Bell Labs
R. A. Logan, Nokia Bell Labs
T. Tabun-Ek, Nokia Bell Labs
W. Savin, New Jersey Institute of Technology
D. W. Harris, Evans Analytical Group

Document Type

Article

Publication Date

12-1-1990

Abstract

The temperature dependence of the resistance in the Pt(60 nm)/Ti(50 nm) nonalloyed ohmic contacts to p-InAs (Zn doped 1×10¹⁸ to 1×10¹⁹ cm^-3) induced by rapid thermal processing in the temperature range of 300-600 °C was studied. The ohmic nature of these contacts was attributed to both the low metal-semiconductor interfacial barriers and to the heavily doped semiconductor contacting layers. A phenomenological model was used to fit the measured temperature dependence contact resistance. The results indicated conversion from thermionic emission as the dominant carriers transport mechanism across the interfacial barrier for the as-deposited sample to a combination of thermionic and field emission mechanism for the heat-treated samples.

Identifier

0040489541 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.346256

ISSN

00218979

First Page

4141

Last Page

4150

Issue

8

Volume

68

Recommended Citation

Katz, A.; Chu, S. N.G.; Weir, B. E.; Dautremont-Smith, W. C.; Logan, R. A.; Tabun-Ek, T.; Savin, W.; and Harris, D. W., "Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing" (1990). Faculty Publications. 17705.
https://digitalcommons.njit.edu/fac_pubs/17705