Fabrication of wedge-shaped silicon field emitters with nm-scale radii

Document Type

Article

Publication Date

12-1-1991

Abstract

Wedge-shaped field emitters may have some advantages over conical tip emitters as electron sources in vacuum microelectronic devices. A method has been developed to make atomically sharp wedge-shaped silicon through use of dry etching and dry oxidation. Transmission electron microscopy studies show that silicon wedge emitters can be made with wedge radius and angle at 1 nm and 60°, respectively, by repeated oxidation in oxygen at 950°C.

Identifier

2542430839 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.104417

ISSN

00036951

First Page

1042

Last Page

1043

Issue

10

Volume

58

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