Ohmic contacts to heavily carbon-doped p-AlxGa1-xAs

Authors

A. Katz, Nokia Bell Labs
C. R. Abernathy, Nokia Bell Labs
S. J. Pearton, Nokia Bell Labs
B. E. Weir, Nokia Bell Labs
W. Savin, New Jersey Institute of Technology

Document Type

Article

Publication Date

12-1-1991

Abstract

Two different metallization schemes, AuBe(80 nm) and Pt(75 nm)/Ti(50 nm), were investigated as potential ohmic contacts for highly carbon-doped p-Al xGa1-xAs. The best contact resistance values of 0.015 and 0.025 Ω mm were achieved by applying the Pt/Ti scheme onto 1×10 ²⁰ and 1×10¹⁹ cm^-3 C-doped AlGaAs, respectively, followed by rapid thermal processing at 450 °C. The AuBe contacts yielded their lowest values of 0.025 and 0.05 Ω mm for the same doping levels as a result of rapid thermal processing at 425 °C. The heat treatment at 450 °C caused only limited reactions in both the Pt/Ti and Ti/AlGaAs interfaces and did not lead to significant degradation of the stable microstructure.

Identifier

0005062596 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.348707

ISSN

00218979

First Page

2276

Last Page

2279

Issue

4

Volume

69

Recommended Citation

Katz, A.; Abernathy, C. R.; Pearton, S. J.; Weir, B. E.; and Savin, W., "Ohmic contacts to heavily carbon-doped p-AlxGa1-xAs" (1991). Faculty Publications. 17493.
https://digitalcommons.njit.edu/fac_pubs/17493