Review of infrared image sensors with Schottky-barrier detectors

Document Type

Article

Publication Date

12-1-1991

Abstract

This paper reviews the progress in the development of infrared image sensors with Schottky-barrier detectors (SBDs). Schottky-barrier focal plane arrays (FPAs) are infrared imagers that are fabricated by a well established silicon VLSI process, therefore, at the present time they represent the most advanced technology for large-area high-density focal plane arrays for many SWIR (1 to 3 μm) and MWIR (3 to 5 μm) applications. SBD line sensing arrays with up to 4096 × 4 elements and 2048 × 16-TDI elements were developed and SBD staring (area) arrays with up to 648 × 487 elements have been reported. PtSi SBDs represent the most established SBD technology for applications in the SWIR and MWIR bands. At an operating temperature of 77K, the dark current density of PtSi SBDs is in the range of 1.0 to 4.0 nA/cm2-Pd2Si SBDs were developed for operation with passive cooling at 120K in the SWIR band. IrSi SBDs have also been investigated to extend the application of Schottky-barrier focal plane arrays (EPAs) into the LWIR (8 to 10 μm) spectral range. Because of very low readout noise, the IR-CCD imagers with PtSi SBDs which have quantum efficiency of 0.5% to 1% at 4.0 μm are capable of 300K thermal imaging with a noise equivalent temperature (NEΔT) from 0.04 to 0.15K for operation at 30 frames/s and f/1.0 to f/2.8 optics.

Identifier

0026404276 (Scopus)

Publication Title

Optoelectronics Tokyo

ISSN

09125434

First Page

173

Last Page

203

Issue

2

Volume

6

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