Inverted gate GaAs MESFET by epitaxial liftoff

Document Type

Article

Publication Date

1-1-1992

Abstract

A GaAs film deposited on metal by epitaxial liftoff can form a Schottky barrier. This film is used make a 1 µm gate length inverted gate GaAs metal-semiconductor field-effect transistor (MESFET) that can be pinched off by the inverted gate. © 1992, The Institution of Electrical Engineers. All rights reserved.

Identifier

0027115684 (Scopus)

Publication Title

Electronics Letters

External Full Text Location

https://doi.org/10.1049/el:19920448

ISSN

00135194

First Page

708

Last Page

709

Issue

8

Volume

28

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