Dark Current Analysis and Characterization of [formula omitted] Graded Photodiodes with x > 0.53 for Response to Longer Wavelengths (>1.7μm)

Authors

Krishna R. Linga
Gregory H. Olsen, UTC Aerospace Systems
Vladimir S. Ban, Newark College of Engineering
Abhay M. Joshi
Walter F. Kosonocky, Newark College of Engineering

Document Type

Article

Publication Date

1-1-1992

Abstract

This paper describes the dark current properties of In Ga1-x,As photodiodes, where x is varied from 0.53 to 0.82 for extending the long wavelength cutoff from 1.7 to 2.6 μ m. Detailed analyses of optoelectrical parameters of Ino.82Ga0.18As photodiodes are presented. Dark current, which is a critical parameter and limits the operation of the photodiode, is analyzed and compared with the experimental values. Typical characteristics of photodiodes with cutoff wavelengths of 1.7 μm(x = 0.53), 2.2 μm(x - 0.72), and 2.6 μm(x = 0.82) are presented. Typical and best values of dark current obtained are presented. © 1992 IEEE

Identifier

0026903706 (Scopus)

Publication Title

Journal of Lightwave Technology

External Full Text Location

https://doi.org/10.1109/50.156844

e-ISSN

15582213

ISSN

07338724

First Page

1050

Last Page

1055

Issue

8

Volume

10

Fund Ref

National Aeronautics and Space Administration

Recommended Citation

Linga, Krishna R.; Olsen, Gregory H.; Ban, Vladimir S.; Joshi, Abhay M.; and Kosonocky, Walter F., "Dark Current Analysis and Characterization of [formula omitted] Graded Photodiodes with x > 0.53 for Response to Longer Wavelengths (>1.7μm)" (1992). Faculty Publications. 17441.
https://digitalcommons.njit.edu/fac_pubs/17441