HgCdTe photodiodes-A device study

Authors

Fei Ming Tong, Shanghai Institute of Technical Physics Chinese Academy of Sciences
Yuan Haoxin, Shanghai Institute of Technical Physics Chinese Academy of Sciences
Yang Xiuzhen, Shanghai Institute of Technical Physics Chinese Academy of Sciences
N. M. Ravindra, New Jersey Institute of Technology

Document Type

Article

Publication Date

1-1-1992

Abstract

Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition. © 1992.

Identifier

44049112291 (Scopus)

Publication Title

Infrared Physics

External Full Text Location

https://doi.org/10.1016/0020-0891(92)90067-4

ISSN

00200891

First Page

511

Last Page

522

Issue

6

Volume

33

Fund Ref

National Natural Science Foundation of China

Recommended Citation

Tong, Fei Ming; Haoxin, Yuan; Xiuzhen, Yang; and Ravindra, N. M., "HgCdTe photodiodes-A device study" (1992). Faculty Publications. 17416.
https://digitalcommons.njit.edu/fac_pubs/17416