Current—Voltage Measurements of Thermally Grown SiO2 Films on Etched Silicon Surfaces

Document Type

Article

Publication Date

1-1-1992

Abstract

Experimental results of the current—voltage (I‐U) measurements of thermaly grown thin SiO2 films on virgin and plasma etched silicon surfaces are reported. The I‐U measurements include static I‐U and dynamic I‐U or time dependent dielectric breakdowns (TDDB). The structures used in this study are Al/Polysilicon/SiO2/Si/Al capacitors fabricated on n‐Si and p‐Si substrates. These capacitors, ranging in areas from 0.001 to 0.05 cm2, were made using various plasma process conditions and etch reactors. Two different processing sequences are presented. The first process uses a sacrificial oxidation step after the initial plasma exposure (grow a thermal oxide, strip the oxide, and regrow an oxide). The second does not include the sacrificial oxidation. A constant current probe technique is used for evaluating the breakdown behavior of MOS capacitors. 1 m̈A is used as the standard test current for the analysis. Based on preliminary studies for the control samples, the density of defects is found to be ≈ 2 cm−2 for the former case and 4 cm−2 for the latter one. Overall, the results obtained show that sacrificial oxidation improves oxide integrity, yields higher breakdown fields, and minimizes defect densities. Copyright © 1992 WILEY‐VCH Verlag GmbH & Co. KGaA

Identifier

84990677998 (Scopus)

Publication Title

Physica Status Solidi A

External Full Text Location

https://doi.org/10.1002/pssa.2211290129

e-ISSN

1521396X

ISSN

00318965

First Page

291

Last Page

300

Issue

1

Volume

129

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