A survey of the potential of an IrSi Schottky barrier MOSFET based on simulation studies

Document Type

Article

Publication Date

1-1-1992

Abstract

Schottky barrier MOSFETs are expected to offer certain fabrication advantages, low series resistance and the feasibility to go into submicron technology eliminating short-channel effects and latchup in CMOS circuits. A p-channel MOSFET using IrSi Schottky contacts as source and drain is reviewed theoretically. The limitations of the device arising from the oxide offset between source/channel is studied with the help of a 1-D simulation program SEDAN. Since the process sequence leads to an offset between source and channel, the performance of the SBMOSFETs with and without an offset is estimated using the 2-D device simulation program PISCES for PtSi or IrSi as source and drain materials. The simulation results show a considerable gain improvement for a modified device structure (i.e. without offset: gate overlapping source-drain edges). The gain of the device with an overlapping gate using PtSi and IrSi is 32 and 82% of a conventional MOSFET's gain, respectively. © 1992.

Identifier

0026882578 (Scopus)

Publication Title

Solid State Electronics

External Full Text Location

https://doi.org/10.1016/0038-1101(92)90285-K

ISSN

00381101

First Page

829

Last Page

833

Issue

6

Volume

35

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