Application of thermal imaging methodology for plasma etching diagnosis

Document Type

Conference Proceeding

Publication Date

1-1-1992

Abstract

This paper describes the application of thermal imaging by an infrared CCD TV camera with PtSi Schottky-barrier detectors for in-situ monitoring of plasma etching parameters. In-situ radiometric measurements were successfully employed for wafer temperature measurements and end-point detection during plasma etching of polycrystalline silicon film on oxidized Si substrate for normal as well as oblique viewing. It was shown that thermal imaging can also be used for remote sensing of etch rate, heat of reaction and for measuring thermal time constants. The heat transfer coefficient of the thermal contact between the Si wafer and the water-cooled electrode can be determined from these measurements. The values of the heat transfer coefficients for the wafers just placed on the electrode without any provision of a good thermal contact were found to fall in the range of 8 to 12 J/m2-s-K and increased to about 200 J/m2-s-K when vacuum oil was used to improve the thermal contact.

Identifier

0026628488 (Scopus)

ISBN

[0819407259]

Publication Title

Proceedings of SPIE the International Society for Optical Engineering

ISSN

0277786X

First Page

204

Last Page

209

Volume

1594

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