Fowler-Nordheim tunneling in thin SiO2 films

Document Type

Article

Publication Date

1-1-1992

Abstract

An analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature-dependent current-voltage characteristics of very thin films SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed. © 1992 IOP Publishing Ltd.

Identifier

0041470880 (Scopus)

Publication Title

Smart Materials and Structures

External Full Text Location

https://doi.org/10.1088/0964-1726/1/3/002

e-ISSN

1361665X

ISSN

09641726

First Page

197

Last Page

201

Issue

3

Volume

1

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