Electrical Properties of Ti/Au/SiO2/InP Structures

Document Type

Article

Publication Date

1-1-1992

Abstract

Experimental studies of the electrical properties of Ti/Au/SiO2/InP structures are presented here. The metal–insulator–semiconductor (MIS) capacitors were fabricated with oxide thicknesses of 195, 420, and 610 nm, respectively, on n‐type InP substrates, using rapid thermal chemical vapor deposition (RTCVD) techniques. The characterization techniques employed in these experiments were high frequency capacitance–voltage (C–U) and current–voltage (I–U). The electrical parameters obtained from the C–U and I–U measurements are discussed. Copyright © 1992 WILEY‐VCH Verlag GmbH & Co. KGaA

Identifier

84910124289 (Scopus)

Publication Title

Physica Status Solidi A

External Full Text Location

https://doi.org/10.1002/pssa.2211340226

e-ISSN

1521396X

ISSN

00318965

First Page

567

Last Page

574

Issue

2

Volume

134

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