Fabrication of self-aligned gated field emitters

Document Type

Article

Publication Date

12-1-1992

Abstract

Reports a new self-aligned process to form gated field emitters including an evaluation of dielectrics and field emission measurements. This process offers advantages including gate opening control down to 0.25 mu m diameter without electron-beam writing assistance, a planar structure, and thick dielectric for capacitance reduction. The current-voltage characterization of the gated field emitter follows Fowler-Nordheim behavior. Leakage characteristics of various dielectric materials are measured and described.

Identifier

36149030662 (Scopus)

Publication Title

Journal of Micromechanics and Microengineering

External Full Text Location

https://doi.org/10.1088/0960-1317/2/1/005

ISSN

09601317

First Page

21

Last Page

24

Issue

1

Volume

2

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