Reactive ion etching damage to strained Si1-xGexheterojunction diodes

Document Type

Conference Proceeding

Publication Date

1-1-1993

Abstract

This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.

Identifier

84907689827 (Scopus)

ISBN

[9782863321355, 2863321358]

Publication Title

European Solid State Device Research Conference

ISSN

19308876

First Page

321

Last Page

324

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