Formation of TiSi2/n + /p‐Silicon Junctions by Implantation through Metal Technique

Document Type

Article

Publication Date

1-1-1993

Abstract

Experimental studies of the formation and electrical characterization of TiSi2/n + /p‐Si shallow junctions are presented. The formation of shallow n + p junction, by ion implantation of As + through Ti films evaporated on p‐Si substrates followed by rapid thermal annealing (RTA) and conventional furnace annealing, is performed in these experiments. Structural techniques such as secondary ion mass spectroscopy (SIMS) and Rutherford backscattering (RBS) experiments are employed to characterize these devices. RUMP simulations are deployed to analyze and interpret the RBS data. Temperature dependent current‐voltage measurements of these junctions are performed in the temperature range of 250 to 400 K. Interpretations for these results are sought from conventional pn junction theory. Copyright © 1993 WILEY‐VCH Verlag GmbH & Co. KGaA

Identifier

85024778866 (Scopus)

Publication Title

Physica Status Solidi A

External Full Text Location

https://doi.org/10.1002/pssa.2211400128

e-ISSN

1521396X

ISSN

00318965

First Page

283

Last Page

293

Issue

1

Volume

140

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