LPCVD of silicon carbide films from the organosilanes diethylsilane and di-t-butylsilane

Document Type

Conference Proceeding

Publication Date

1-1-1993

Abstract

In this paper, the kinetics and properties of amorphous LPCVD silicon carbide films synthesized from the single organosilane precursors diethylsilane (DES) or di-t-butylsilane (DTBS) are discussed, For DES, the growth rate is observed to vary linearly with flow rate and pressure, pressure, while for DTBS, a square root dependency is seen as a function of these parameters. An Arrhenius type behavior was observed for both chemistries yielding activation energy values of 40 and 25 kcal/mol for DES and DTBS respectively. The elemental composition of the films became progressively richer in carbon as the deposition temperature increased with stoichiometry occurring near 750°C. The film stress was dependent on carbon content and became compressive at compositions near Si0.35c0. 65. The hardness and Young's modulus of the films increased with increasing carbon content reaching maxima near stoichiometry. Free-standing membranes produced under optimal processing conditions had a relatively low optical transmission due to excess carbon. Although, transmission characteristics were improved by adding NH3 in the reaction chamber, the resulting silicon carbonitride films exhibited undesirable high values of tensile stress.

Identifier

0027885701 (Scopus)

ISBN

[1558992022, 9781558992023]

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/proc-306-219

ISSN

02729172

First Page

219

Last Page

228

Volume

306

This document is currently not available here.

Share

COinS