Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon

Authors

Onofrio L. Russo, New Jersey Institute of Technology
Katherine A. Dumas, New Jersey Institute of Technology
Michael H. Herman, New Jersey Institute of Technology

Document Type

Conference Proceeding

Publication Date

1-1-1993

Abstract

The critical point energies, Eo, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 10¹⁴ and 10¹⁶ e^-/cm² were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, E1 are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.

Identifier

0027151644 (Scopus)

ISBN

[1558991743]

Publication Title

Materials Research Society Symposium Proceedings

ISSN

02729172

First Page

213

Last Page

218

Volume

279

Recommended Citation

Russo, Onofrio L.; Dumas, Katherine A.; and Herman, Michael H., "Synthesis of critical point energies for 1 MeV electron irradiated p-type silicon" (1993). Faculty Publications. 17039.
https://digitalcommons.njit.edu/fac_pubs/17039