Growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane

Document Type

Article

Publication Date

2-28-1993

Abstract

Diethylsilane (DES) has been used to synthesize amorphous silicon carbide and silicon dioxide films by low pressure chemical vapor deposition. For silicon carbide, the deposition rate at 700°C was observed to vary linearly with flow rate and pressure while the stoichiometry of the deposits showed little variation from a composition of Si0.6C0.4. In the 600-700°C range, the growth rate was observed to follow an Arrhenius behavior with an activation energy of 41 kcal mol-1. The stoichiometry became progressively richer in carbon with higher temperatures. The onset of crystallinity was observed to occur for the 850°C deposits and the films were found to be tensile in all cases. The silicon dioxide films were synthesized in the temperature range 350-475°C with the growth rate observed to follow an Arrhenius behavior with an apparent activation energy of 10 kcal mol-1. The growth rate was seen to increase with higher pressure and to vary as a function of the square root of the DES flow rate and O2-to-DES ratio. In both the pressure and the O2-to-DES ratio studies conducted at 400°C, there were points of abrupt cessation in deposition. The density and index of refraction of the films were found to be 2.25 g cm-3 and 1.45 respectively, independent of deposition conditions. The etch rate of the films in a 25°C P-etch solution was observed to decrease with higher deposition or annealing temperatures, reflecting densification of the material. Despite severe aspect ratios, the films were seen to exhibit good step coverage. © 1993.

Identifier

0027540419 (Scopus)

Publication Title

Materials Science and Engineering B

External Full Text Location

https://doi.org/10.1016/0921-5107(93)90101-R

ISSN

09215107

First Page

172

Last Page

180

Issue

1-3

Volume

17

Fund Ref

National Science Foundation

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