Post-metallization annealing of metal-tunnel oxide-silicon diodes

Document Type

Article

Publication Date

12-1-1993

Abstract

We report a post-metallization annealing study of very thin oxide (2.4-3.2 nm), aluminum gate metal-tunnel oxide-(p) silicon devices. Voltage dependence measurements of both tunnel current and high-frequency capacitance as functions of anneal time and temperature reveal that annealing the thin oxide devices after metallization leads to a decrease in interface state density, with dynamics which are similar to, though slower than, what has been observed in thicker oxide aluminum gate systems.

Identifier

0001323534 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.355311

ISSN

00218979

First Page

4780

Last Page

4782

Issue

7

Volume

74

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