Injection-related damage in metal-oxide-silicon tunnel diodes

Document Type

Conference Proceeding

Publication Date

12-1-1993

Abstract

Current-votage and conductance-voltage characterization is used to study high bias related `positive charge' on MOS tunnel diodes fabricated on p-type substrates. This charge effect appears to be associated with interface state levels that are located both throughout the band gap, and at a well-defined energy level roughly 0.3 eV above the silicon valence band edge. The well-defined state apparently acts as a tunneling center communicating with the gate electrode and silicon valence band. In addition, the first observation of high bias related charge is reported for tunnel diodes built on n-type substrates. The charge has positive character at low bias levels, transforming to net negative charge at high gate voltages.

Identifier

0027848099 (Scopus)

ISBN

[1558991794]

Publication Title

Materials Research Society Symposium Proceedings

ISSN

02729172

First Page

229

Last Page

234

Volume

284

This document is currently not available here.

Share

COinS