Hydrogen Passivation in n- and p-Type 6H-SiC

Document Type

Article

Publication Date

1-1-1997

Abstract

Hydrogen passivation effects are found to be much more prevalent in p-type 6H-SiC relative to n-type material. Reactivation of passivated B acceptors occurs at ∼700°C, corresponding to a reactivation energy of ∼3.3 eV. This is much higher than for passivated acceptors in Si, where reactivation occurs at ≤200°C. The incorporation depth of 2H from a plasma at 200°C is ≤0.1 μ in 30 min, corresponding to a diffusivity approximately two orders of magnitude lower than in Si at the same temperature. The average energy of ions in the 2H plasma has an influence on the peak concentration of incorporated deuterium and on its diffusion depth.

Identifier

0000517478 (Scopus)

Publication Title

Journal of Electronic Materials

External Full Text Location

https://doi.org/10.1007/s11664-997-0150-4

ISSN

03615235

First Page

198

Last Page

202

Issue

3

Volume

26

Grant

DMR-9421109

Fund Ref

Army Research Office

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