The optical characterization of boron-doped MPCVD diamond films

Document Type

Article

Publication Date

1-1-1997

Abstract

Photoluminescence and infrared absorption studies were performed on boron doped diamond films deposited on a synthetic nitrogen-doped diamond substrate. Based on the infrared absorption spectra, oxygen related defects and boron-nitrogen complexes formed during growth procedure were identified. In the photoluminescence experiment two new emission bands peaking at 693 and 602 nm were found. The narrow 602 nm band was attributed to the boron aggregates. The broad 693 nm band was assigned to the nitrogen centers disturbed by the presence of boron atoms. The interdiffusion of boron and nitrogen atoms is discussed. © 1997 Elsevier Science S.A.

Identifier

0043265961 (Scopus)

Publication Title

Diamond and Related Materials

External Full Text Location

https://doi.org/10.1016/s0925-9635(96)00766-2

ISSN

09259635

First Page

940

Last Page

943

Issue

8

Volume

6

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