Dry etching of germanium in magnetron enhanced SF6 plasmas

Document Type

Article

Publication Date

7-1-1997

Abstract

Magnetron enhanced reactive ion etching of germanium was investigated in SF6 plasmas. Ge etch rates were determined as a function of cathode power density (0.1-0.5 W/cm2), pressure (2-8 mTorr), and SF6 flow rate (2-11.5 seem). Etch rate increased as pressure and flow rate were increased, but exhibited the unusual characteristic of decreasing as cathode power was increased. Auger electron spectroscopy measurements showed the presence of a sulfur residue (<1 at. %) upon etching, while scanning electron microscopy revealed that smooth etched surfaces were attained in SF6 magnetron enhanced plasmas. © 1997 American Vacuum Society.

Identifier

0345892247 (Scopus)

Publication Title

Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures

ISSN

10711023

First Page

990

Last Page

992

Issue

4

Volume

15

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