Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

Document Type

Article

Publication Date

7-21-1997

Abstract

We have quantitatively analyzed the structure and the annealing behavior of the point defects introduced by ion implantation in Si. We used deep-level transient spectroscopy to monitor and count interstitial-type (e.g., carbon-oxygen complexes) and vacancy-type (e.g., divacancies) defects introduced by MeV Si implants in crystalline Si and to monitor their annealing behavior for temperatures up to 400 °C. A small fraction (∼4%) of the initial interstitial-vacancy pairs generated by the ions escapes recombination and forms equal concentrations of interstitial- and vacancy-type room-temperature stable defect pairs. At 7≤300 °C, vacancy-type defects dissociate, releasing free vacancies, which recombine with interstitial-type defects, producing their dissolution. This defect annihilation occurs preferentially in the bulk. At temperatures above 300 °C, all vacancy-type defects are annealed and the residual damage contains only ∼3 interstitial-type defects per implanted ion. This imbalance between vacancies and interstitials is not observed in electron-irradiated samples, demonstrating that it is the direct consequence of the extra ion introduced by the implantation process. © 1997 American Institute of Physics.

Identifier

0001080862 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.119546

ISSN

00036951

First Page

389

Last Page

391

Issue

3

Volume

71

This document is currently not available here.

Share

COinS