Analytical modeling of dual-gate HFET's

Document Type

Article

Publication Date

12-1-1997

Abstract

A simple analytical dual-gate hetero-structure fieldeffect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced gm/gd and Cgs/Cdg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results. © 1997 IEEE.

Identifier

0031349783 (Scopus)

Publication Title

IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems

External Full Text Location

https://doi.org/10.1109/43.664223

ISSN

02780070

First Page

1409

Last Page

1417

Issue

12

Volume

16

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