360 × 360 Element three-phase very high frame rate burst image sensor: design operation and performance

Document Type

Article

Publication Date

12-1-1997

Abstract

Design fabrication operation and performance are described for a 360 × 360 element very high frame rate (VHFR) image sensor that can capture images at a frame rate of up to 106 frames/s. This VHFR imager has 50 × 50 μm macropixels each consisting of a high-speed zero-lag photodetector with a 13.5% fill factor and 30 stages of serial-parallel type buried-channel CCD registers for storage and readout of the last 30 image frames acquired. Readout of this imager is similar to a frame transfer CCD consisting of four quadrants. Each quadrant contains one million pixels readout at a relatively slow rate compatible with low readout noise and PC class microcomputer-based date acquisition and storage. This imager is designed using SiO2/Si3N4 gate dielectric four levels of polysilicon three levels of metal eight implants 21 photo masks using 1.5-μm design rules and it has four output ports. The high-speed photodetector is designed in the form of a graded three-potential-level pinned-buried BCCD structure. This 33-μm long photodetector can achieve complete readout of photogenerated electrons in less than 0.1 μs. © 1997 IEEE.

Identifier

0031246984 (Scopus)

Publication Title

IEEE Transactions on Electron Devices

External Full Text Location

https://doi.org/10.1109/16.628813

ISSN

00189383

First Page

1617

Last Page

1624

Issue

10

Volume

44

Grant

F33615-94-C-3003

Fund Ref

Office of Naval Research

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