Dual material gate field effect transistor (DMGFET)

Document Type

Conference Proceeding

Publication Date

12-1-1997

Abstract

A new type of device, the dual material gate field effect transistor (DMGFET), is presented for the first time. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.

Identifier

84886447997 (Scopus)

Publication Title

Technical Digest International Electron Devices Meeting Iedm

ISSN

01631918

First Page

549

Last Page

552

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