Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nm

Document Type

Article

Publication Date

12-8-1997

Abstract

The nonlinear optical responses of laser-ablated Si nanoclusters were measured at λ=532 nm. Re{χ(3)} values as high as -(1.33±0.33) × 10-3 esu were measured for films that were only 200 nm thick. The response time for this nonlinearity was as short as 3.5±0.5 ns, limited by our laser pulse duration. © 1997 American Institute of Physics.

Identifier

0012831203 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.120328

ISSN

00036951

First Page

3332

Last Page

3334

Issue

23

Volume

71

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